What is the main advantage of pulsed laser deposition method used for thin film deposition?

What is the main advantage of pulsed laser deposition method used for thin film deposition?

The main advantages of Pulsed Laser Deposition are: conceptually simple: a laser beam vaporizes a target surface, producing a film with the same composition as the target. versatile: many materials can be deposited in a wide variety of gases over a broad range of gas pressures.

What is pulsed laser deposition technique?

Pulsed laser deposition (PLD) is a physical vapor deposition technique where a high power pulsed laser beam is focused to strike a target of the desired composition. Material is then vaporized and deposited as a thin film on a substrate facing the target.

Which laser is used in PLD?

PLD is a technique that uses high-power laser ultrashort pulses from an excimer, a Nd:YAG or another similar laser. A pulsed-laser beam is focused inside a vacuum chamber onto a solid target that is to be deposited.

How pulsed laser deposition is different from evaporation and sputtering?

Sputtering can handle deposition over a large area of substrates upto 4inches to 6 inches in diameter. Large area deposition is possible only through sputtering, whereas PLD is limited to tiny substrates (5mm x 5mm), larger single crystal substrates also can be used, but then the substrate becomes costly.

How does atomic layer deposition work?

Atomic layer deposition (ALD) is a vapor phase technique used to deposit thin films onto a substrate. In each alternate pulse, the precursor molecule reacts with the surface in a self-limiting way, this ensures that the reaction stops once all of the reactive sites on the substrate have been used.

What is plasma plume?

During deposition, amorphous carbon is evaporated from a solid target by a high-energy KrF laser, ionized, and ejected as a plasma plume. The plume expands outwards and deposits the target material on a substrate. The plasma properties of the plume determine the quality of the thin films deposited on the substrate.

What is difference between ALD and CVD?

ALD proceeds via 2 half-reactions, done one after the other, while CVD is a continuous process where all reactants are supplied at the same time to grow the film.

Is atomic layer deposition CVD?

Atomic layer deposition (ALD) is a technique for growing thin films for a wide range of applications. ALD is a special variant of the chemical vapor deposition (CVD) technique where gaseous reactants (precursors) are introduced into the reaction chamber for forming the desired material via chemical surface reactions.

What is RF and DC sputtering?

The main difference is that the power used in RF sputtering is AC, while that in DC sputtering is DC. Basically, during DC sputtering, the working gas will be ionized. During the positive electric field, the positive ions are accelerated to the surface of target and sputter it.

What is pulsed laser deposition (PLD)?

Pulsed Laser Deposition PLD is a thin film deposition (specifically a PVD) technique where a high-power pulsed laser beam is focused inside a vacuum chamber to strike a target of the material that is to be deposited. From: Bioscience and Bioengineering of Titanium Materials (Second Edition), 2013

What is the best literature on pulsed laser deposition of thin films?

Literature: 3) Pulsed laser deposition of thin films / edited by Douglas B. Chrisey and Graham K. Hubler, New York, Wiley, cop. 1994 1) H. M. Christen and G. Eres, Recent advances in pulsed-laser deposition of complex oxides, J. Phys.: Condens. Matter 20 (2008) 264005 (16pp)

What is the PLD technique?

PLD technique has evolved as an alternative and added advantage of preservation of stoichiometry of target phase. PLD is very promising for coatings of bioactive glass on implant metals. The PLD technique involves three main steps: ablation of the target material, formation of a highly energetic plume, and the growth of the film on the substrate.

How does the laser pulse interact with the target?

Interaction of the laser pulse with the target is a highly non-equilibrium process, where the absorption of the laser energy is confined to very small volume. The stoichiometry of the target is then well preserved in the deposited film even for multi-component or rare-earth doped compositions.